Samsung Electronics and Broadcom have launched a sweeping semiconductor partnership covering AI chip production stages from processor design to advanced packaging, signing a strategic memorandum of understanding at an AI summit in San Francisco on July 24. The agreement calls for up to $200 billion, approximately 290 trillion won, in AI infrastructure cooperation over the five years leading to 2030. The signing ceremony was attended by senior executives including Han Jin-man, head of Samsung Electronics’ foundry business, and Broadcom Chief Executive Hock Tan. Samsung plans to supply high-bandwidth memory and other advanced memory products for Broadcom’s AI accelerators; Samsung began shipping its HBM4 product in February, based on 1c-generation DRAM and a 4-nanometer base die, and in May began providing customers with samples of HBM4E. Samsung will also apply its 2-nanometer and more advanced foundry processes to Broadcom’s next-generation AI accelerators and high-speed networking chips. The companies expect the collaboration to improve processor performance and energy efficiency while shortening product development cycles.