Samsung Electronics has decided to apply its most advanced 2-nanometer process technology to its eighth-generation high-bandwidth memory (HBM5), a key component of artificial intelligence (AI) chips. Gu Jahum, head of technology development for the foundry business at Samsung Electronics and a vice president, announced the plan in an interview on the 27th. HBM5 is expected to process data more than 50% faster than HBM4E, achieved by applying the latest process to the "base die" and using a 2-nanometer process based on Gate-All-Around (GAA) structure. Samsung will also implement through-silicon vias (TSV) at a denser pitch. The company highlighted its turnkey approach, handling design, fabrication, and packaging, which it said reduces completion time and expense. Samsung succeeded in mass-producing the world's first 3-nanometer process using GAA in 2022 and began mass production of its first-generation 2-nanometer process in the second half of last year. In the second half of this year, it plans to mass-produce new smartphone chips using a second-generation 2-nanometer process. Gu stated that contract manufacturing orders are coming from smartphone makers, Tesla, and various AI, HPC, and cloud corporations.