Samsung Electronics unveiled zHBM, zNAND-O and V10 BV-NAND to address rising demand for high-performance computing and AI infrastructure. Samsung said zHBM is targeting up to 8x the performance of HBM5, a 3x improvement in performance per watt, and less than half the thermal resistance as it seeks to maximize AI system performance and power efficiency. Industry sources and Samsung officials said the technologies signal a push to restore fundamental competitiveness and secure leadership in memory and NAND through 3D packaging, HCB, thermal management, foundry and on-device AI. Samsung unveils vertically stacked 3D HBM zHBM targets up to 8x HBM5 performance, aiming to break stacking limits, with up to 3x better power efficiency and less than half the thermal resistance of HBM5. Shorter data paths help ease bottlenecks. A model of Samsung Electronics' next-generation 3D memory technology, zHBM, shows HBM stacked vertically on top of an xPU that handles AI computing. While conventional HBM sits beside the GPU, zHBM places memory on top of the GPU to reduce data-trave.