A collaborative research team from GIST, Seoul National University, and USC has developed a neuromorphic semiconductor device that incorporates both memory and self-rectifying properties into a single unit, solving the challenges of nonlinearity and leakage current without requiring separate selector components. The Gwangju Institute of Science and Technology (GIST) announced on July 30 that the team, led by Professor Sanghan Lee, jointly developed the device. By adding barium (Ba) to bismuth ferrite (BiFeO₃), the researchers precisely controlled the migration of oxygen vacancies, enabling linear information storage characteristics. This approach allows stable information storage and processing without the separate selector component previously required, addressing the technological hurdles of nonlinearity—where information is not stored consistently under repeated electrical stimuli—and leakage current that spills over into neighboring devices. Conventional neuromorphic semiconductors required individual selector components for each memory cell, leading to reduced integration density and lower process efficiency.