SK hynix announced on June 18 that it has shipped samples of its next-generation high-bandwidth memory, or HBM4E, to major customers. The 12-layer HBM4E samples were delivered on schedule, and the new memory delivers a maximum data transfer speed of 16 gigabits per second per pin while improving power efficiency by more than 20 percent compared with previous-generation products. SK hynix employed its proprietary Advanced MR-MUF technology to achieve a 48-gigabyte capacity in a 12-layer stack while maintaining structural stability, and the new product reduces thermal resistance by 17 percent compared with the previous HBM4 generation. The company said the enhancements would help improve the performance of AI training and inference workloads, and that the latest interface and optimized design reduce data-transfer latency while ensuring stable operation in high-bandwidth environments. “SK hynix has laid the foundation to strengthen its AI leadership with HBM4E based on its market-leading technological capabilities and manufacturing expertise,” SK hynix Chief Development Officer Ahn Hyun said.